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| SMD Type PNP Silicon Transistor 2SA1981SF SOT-23 Transistors IC Unit: mm Features 3 +0.1 2.9-0.1 +0.1 0.4-0.1 High Hfe:.hFE=100 to 320 +0.1 2.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -35 -30 -5 -800 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE IC=-500iA Testconditons , IE=0 Min -35 -30 -5 Typ +0.1 0.38-0.1 0-0.1 Max Unit V V V IC=-1mA , IB=0 IE=-50iA, IC=0 VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA -0.1 -0.1 100 320 -0.5 120 19 iA iA VCE(sat) IC/IB=-500mA/-20mA fT Cob VCE=-5V, IE=10mA, VCB=-10V, IE=0, f=1MHz V MHz pF hFE Classification Marking Rank hFE O 100 200 EA Y 160 320 www.kexin.com.cn 1 |
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